Item request has been placed!

Item request cannot be made.

Processing Request

Search Results

Display Settings

Results per page: 10

Sort By: Relevance

Filter

Your Filters

Filter by : Subject Publication : ieee journal of the electron devices society

Reset filters

Item request has been placed!

Item request cannot be made.

Processing Request

Academic Journal

Design and Simulation Optimization of an Ultra-Low Specific On-Resistance LDMOS Device

Authors : Shaoxin Yu; Weiheng Shao; Rongsheng Chen

Subjects: Contact field plate (CFP); figures of merits (FOM); lateral double diffusion metal oxide semiconductor (LDMOS)

Source: IEEE Journal of the Electron Devices Society, Vol 12, Pp 14-22 (2024)

Record details

Read Online Read More Add to Saved list

Academic Journal

Does the Threshold Voltage Extraction Method Affect Device Variability?

Authors : Gabriel Espineira; Antonio J. Garcia-Loureiro; Natalia Seoane

Subjects: Threshold voltage; figures of merit; nanowires

Source: IEEE Journal of the Electron Devices Society, Vol 9, Pp 469-475 (2021)

Record details

Read Online Read More Add to Saved list

Academic Journal

Extensive Electrical Characterization Methodology of Advanced MOSFETs Towards Analog and RF Applications

Authors : Valeriya Kilchytska; Sergej Makovejev; Babak Kazemi Esfeh

Subjects: Analog and RF figures of merit; FDSOI; FinFET

Source: IEEE Journal of the Electron Devices Society, Vol 9, Pp 500-510 (2021)

Record details

Read Online Read More Add to Saved list

Academic Journal

Characterization of 22 nm FDSOI nMOSFETs With Different Backplane Doping at Cryogenic Temperature

Authors : Tiantian Xie; Qing Wang; Hao Ge

Subjects: Backplane (BP) doping; cryogenic; fully- depleted silicon-on-insulator (FDSOI)

Source: IEEE Journal of the Electron Devices Society, Vol 9, Pp 1030-1035 (2021)

Record details

Read Online Read More Add to Saved list

Academic Journal

28-nm FD-SOI CMOS RF Figures of Merit Down to 4.2 K

Authors : Lucas Nyssens; Arka Halder; Babak Kazemi Esfeh

Subjects: 28-nm FD-SOI; UTBB MOSFET; cryogenic CMOS

Source: IEEE Journal of the Electron Devices Society, Vol 8, Pp 646-654 (2020)

Record details

Read Online Read More Add to Saved list

Academic Journal

Self-Heating in FDSOI UTBB MOSFETs at Cryogenic Temperatures and its Effect on Analog Figures of Merit

Authors : Lucas Nyssens; Arka Halder; Babak Kazemi Esfeh

Subjects: UTBB; FDSOI; MOSFET

Source: IEEE Journal of the Electron Devices Society, Vol 8, Pp 789-796 (2020)

Record details

Read Online Read More Add to Saved list

Academic Journal

28-nm FDSOI nMOSFET RF Figures of Merits and Parasitic Elements Extraction at Cryogenic Temperature Down to 77 K

Authors : Babak Kazemi Esfeh; Valeriya Kilchytska; N. Planes

Subjects: FDSOI; UTBB MOSFETs; RF figures of merit (FoM)

Source: IEEE Journal of the Electron Devices Society, Vol 7, Pp 810-816 (2019)

Record details

Read Online Read More Add to Saved list

Academic Journal

A New Figure of Merit, ${\Delta V_{\text {DIBLSS}} /(I_{\rm {d},{\mathrm{ sat}}} /I_{\rm {sd},{\mathrm{ leak}}} )}$ , to Characterize Short-Channel Performance of a Bulk-Si n-Channel FinFET Device

Authors : Yi-Chuen Eng; Luke Hu; Tzu-Feng Chang

Subjects: Logic figures of merit (FoMs); bulk n–FinFETs; lightly doped drain (LDD)

Source: IEEE Journal of the Electron Devices Society, Vol 5, Iss 1, Pp 18-22 (2017)

Record details

Read Online Read More Add to Saved list